Fabrication and Characteristics of Energetic Igniters Realized Through Sputtered Tantalum Nitride(TaN) Film Bridge

DOI

10.2991/cmfe-15.2015.21How to use a DOI?

Keywords

TaN; Film Bridge; Plasma; Temperature Coefficient of Resistance; Electrical Explosion Characteristic

Abstract

This paper introduces energetic igniters fabricated using TaN film bridge by magnetron sputtering. It is inferred from the image of wet-etched TaN film bridge that film edge is clearly visible and relatively smooth with lateral erosion size of 5 ?m. The X-ray diffraction (XRD) and Temperature Coefficient of Resistance (TCR) results show that the crystalline of TaN films has great influence on the TCR values by changing the N2 partial pressure. The TaN films in this paper exhibit a near zero TCR value of approximately 10 ppm/oC. The electrical explosion characteristics employing a capacitor discharge firing set at the optimized charging voltage of 45V reveal that an excellent explosion phenomenon of TaN film bridge is observed with small ignition delay time, high explosion temperature, much more bright flash of light and much large quantities of the ejected product particles. The peak explosive temperature of TaN film bridge at various dimensions is ranging from 3500K to 5700K, which is almost as same as that of the semiconductor bridge.

Copyright

© 2015, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Yichao Yan
AU  - Jie Xiong
AU  - Hongchuan Jiang
AU  - Wanli Zhang
PY  - 2015/07
DA  - 2015/07
TI  - Fabrication and Characteristics of Energetic Igniters Realized Through Sputtered Tantalum Nitride(TaN) Film Bridge
BT  - Proceedings of the International Conference on Chemical, Material and Food Engineering
PB  - Atlantis Press
SP  - 83
EP  - 87
SN  - 2352-5401
UR  - https://doi.org/10.2991/cmfe-15.2015.21
DO  - 10.2991/cmfe-15.2015.21
ID  - Yan2015/07
ER  -