A 40nm CMOS Ultra-Wideband Low Noise Amplifier Design

DOI

10.2991/wcnme-19.2019.9How to use a DOI?

Keywords

CMOS, feedback; flatness; Low Noise Amplifier(LNA); Noise Figure(NF); bandwidth

Abstract

An ultra-wideband low noise amplifier(LNA) based on the cascode configuration with resistive feedback is presented in this paper. A shunt-shunt feedback resistor and a pre-π matching network is employed to achieve wideband input impedance matching, and to enhance gain response and reduce noise for using a post-cascode inductor LP. In this paper, the SMIC 40nm CMOS process is used. The circuit simulation results show that S11 is lower than -10dB, and the gain S21 is around 10±2dB,and the NF is lower than 4.5dB in the 3.5-31-GHz frequency range.

Copyright

© 2019, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Jiaqian Wu
AU  - Zhangfa Liu
PY  - 2019/06
DA  - 2019/06
TI  - A 40nm CMOS Ultra-Wideband Low Noise Amplifier Design
BT  - Proceedings of the 2019 International Conference on Wireless Communication, Network and Multimedia Engineering (WCNME 2019)
PB  - Atlantis Press
SP  - 36
EP  - 40
SN  - 2352-538X
UR  - https://doi.org/10.2991/wcnme-19.2019.9
DO  - 10.2991/wcnme-19.2019.9
ID  - Wu2019/06
ER  -