Design of CMOS Dual-band Reconfigurable Low Noise Amplifier for Radar T/R Module

DOI

10.2991/wcnme-19.2019.8How to use a DOI?

Keywords

reconfigurable; low Noise amplifier; CMOS; dual-band

Abstract

A dual-band reconfigurable low noise amplifier(LNA) for T/R module is designed based on SMIC 65nm CMOS process In this paper, the low noise amplifier can operate in L/S band optionally. The simulation results shown it has a larger than 20dB gain and smaller than 2.5dB noise figure for both L and S bands, the IP3 is bigger than -8dBm, the layout of low noise amplifier occupies 1750um*1000um area.

Copyright

© 2019, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Zhangfa Liu
AU  - Jiaqian Wu
PY  - 2019/06
DA  - 2019/06
TI  - Design of CMOS Dual-band Reconfigurable Low Noise Amplifier for Radar T/R Module
BT  - Proceedings of the 2019 International Conference on Wireless Communication, Network and Multimedia Engineering (WCNME 2019)
PB  - Atlantis Press
SP  - 31
EP  - 35
SN  - 2352-538X
UR  - https://doi.org/10.2991/wcnme-19.2019.8
DO  - 10.2991/wcnme-19.2019.8
ID  - Liu2019/06
ER  -