Research on Oxygen Concentration in the Clean Room of Semiconductor Factory Based on FLUENT

DOI

10.2991/rac-18.2018.39How to use a DOI?

Keywords

FLUENT, semiconductor, cleanroom, oxygen concentration

Abstract

This paper simulates the diffusion of nitrogen in clean room. In GAMBIT, we establish a three-dimensional model, then set parameters in FLUENT. Finally, the FLUENT post-processing function and TECPLOT obtain the velocity vector diagram, nitrogen and oxygen distribution diagram and anoxic zone distribution map. The research shows that changing the ventilation structure can reduce the range of the hypoxia area thus ensure the health and safety of the work.

Copyright

© 2018, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Bo Meng
PY  - 2018/10
DA  - 2018/10
TI  - Research on Oxygen Concentration in the Clean Room of Semiconductor Factory Based on FLUENT
BT  - Proceedings of the 8th Annual Meeting of Risk Analysis Council of China Association for Disaster Prevention (RAC 2018)
PB  - Atlantis Press
SP  - 251
EP  - 257
SN  - 2352-5428
UR  - https://doi.org/10.2991/rac-18.2018.39
DO  - 10.2991/rac-18.2018.39
ID  - Meng2018/10
ER  -