Simulation Study on High-Voltage IGBT Turn-Off with Polysilicon Distributed Gate Resistance Effect

DOI

10.2991/mmssa-18.2019.19How to use a DOI?

Keywords

IGBT; turn-off; distributed gate resistance

Abstract

This paper presents a device simulation study on a high-voltage 4-cell IGBT structure with a distributed gate resistance. It is shown that during turn-off, the emitter current of IGBT will demonstrate a “homogenous– non- homogeneous– re- homogeneous” evolution before the collector voltage rises. Therefore this effect will generate a small amount of local temperature rising, and will not affect the safe turn-off operation of the device on the whole.

Copyright

© 2019, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Rui Jin
AU  - Lei Cui
AU  - Chao Gong
AU  - Yu Wu
PY  - 2019/01
DA  - 2019/01
TI  - Simulation Study on High-Voltage IGBT Turn-Off with Polysilicon Distributed Gate Resistance Effect
BT  - Proceedings of the 2018 International Conference on Mathematics, Modeling, Simulation and Statistics Application (MMSSA 2018)
PB  - Atlantis Press
SP  - 82
EP  - 85
SN  - 1951-6851
UR  - https://doi.org/10.2991/mmssa-18.2019.19
DO  - 10.2991/mmssa-18.2019.19
ID  - Jin2019/01
ER  -