A New 3-D Assembly Approach For Nanoelectromechanical Switch Fabrication

DOI

10.2991/mems.2012.190How to use a DOI?

Keywords

nanoelectromechanical switch; 3-D nanoassembly; electrostatic force actuation; electrical characterization

Abstract

Achieving high-accuracy and repeatable fabrication of nanoelectromechanical switch is a grand challenge. In this paper, a new approach based on 3-D nanomanipulation has been proposed to integrate zinc oxide nanowire with lithographically patterned electrodes. Compared with other methods, a high level of manipulation accuracy can be reached without utilizing advanced lithographic tools. The device itself is actuated by electrostatic force and its physical model has also been developed for determining several key parameters. After the process of assembly, an in situ electrical characterization experiment is conducted. Experimental results illustrate the low pull-in voltages of the device combined with nearly zero current leakage, which are key parameters for being a good substitute of the CMOS devices in the future.

Copyright

© 2012, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Yang Chen
AU  - Xie Hui
AU  - Yan Jihong
AU  - Zhao Jie
PY  - 2012/12
DA  - 2012/12
TI  - A New 3-D Assembly Approach For Nanoelectromechanical Switch Fabrication
BT  - Proceedings of the 1st International Conference on Mechanical Engineering and Material Science (MEMS 2012)
PB  - Atlantis Press
SP  - 725
EP  - 730
SN  - 1951-6851
UR  - https://doi.org/10.2991/mems.2012.190
DO  - 10.2991/mems.2012.190
ID  - Chen2012/12
ER  -