Numerical Simulation of Thermal Stress in Sputtered TiB2 Films by Finite Element Method

DOI

10.2991/mems.2012.63How to use a DOI?

Keywords

TiB2 films; Simulation; Temperature; Thermal stress

Abstract

The thermal stress was generated in sputtered TiB2 films during the films cooled down due to the mismatch of thermal expansion coefficient. As a considerable distinction in the physical and thermal properties of films-substrate system was existed, the thermal stress was still important despite of sputtering at lower temperature. The coupled field quadratic element PLANE13 was used to fabricate the combinational system model, and the finite element analysis codes (ANSYS) was employed to analyze the influence of deposition temperature and cooling velocity on thermal stress. From the results, it is found that the thermal stress increases with the rising of two technical parameters. However, the simulation exhibits a larger magnitude of the thermal stress distributed on the center in comparison to that on the edge of films-substrate system. Moreover, the thermal stress reduction at the interface was found.

Copyright

© 2012, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Xia Mujian
AU  - Ding Hongyan
AU  - Zhou Guanghong
AU  - Zhang Yue
AU  - Zhuang Guozhi
PY  - 2012/12
DA  - 2012/12
TI  - Numerical Simulation of Thermal Stress in Sputtered TiB2 Films by Finite Element Method
BT  - Proceedings of the 1st International Conference on Mechanical Engineering and Material Science (MEMS 2012)
PB  - Atlantis Press
SP  - 232
EP  - 235
SN  - 1951-6851
UR  - https://doi.org/10.2991/mems.2012.63
DO  - 10.2991/mems.2012.63
ID  - Mujian2012/12
ER  -