Analysis of Facet Temperature Distribution of Semiconductor Lasers
Authors
Tiansheng Zhao, Zaijin Li, Te Li, Peng Lu, Yi Qu, Baoxue Bo, Guojun Liu, Xiaohui Ma, Yong Wang
Corresponding Author
Tiansheng Zhao
Available Online April 2015.
- DOI
- 10.2991/mebe-15.2015.28How to use a DOI?
- Keywords
- Semiconductor laser; COMD; Temperature; ANSYS
- Abstract
In this paper catastrophic optical mirror damage(COMD) mechanism of the semiconductor laser is analyzed. COMD is one of major device damage mechanisms, which is drastically limited laser lifetime and output optical power. The theoretical model that based on heat source with injection current and optical power to describe the temperature distribution of laser is builded. Through analyzing the edge-emitting semiconductor lasers by using ANSYS, we can describe change of facet temperature distribution at COMD events. the results of simulation show that the main reason of COMD is oxidation of the semiconductor laser in facet which caused by optical absorption.
- Copyright
- © 2015, the Authors. Published by Atlantis Press.
- Open Access
- This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).
Cite this article
TY - CONF AU - Tiansheng Zhao AU - Zaijin Li AU - Te Li AU - Peng Lu AU - Yi Qu AU - Baoxue Bo AU - Guojun Liu AU - Xiaohui Ma AU - Yong Wang PY - 2015/04 DA - 2015/04 TI - Analysis of Facet Temperature Distribution of Semiconductor Lasers BT - Proceedings of the 2015 International Conference on Materials, Environmental and Biological Engineering PB - Atlantis Press SP - 115 EP - 118 SN - 2352-5401 UR - https://doi.org/10.2991/mebe-15.2015.28 DO - 10.2991/mebe-15.2015.28 ID - Zhao2015/04 ER -