Proceedings of the 2016 International Symposium on Advances in Electrical, Electronics and Computer Engineering

Characteristics of double planar thin film inductor with Ni-based magnetic film for DC/DC integration

Authors
Mingming Chen, Guifu Ding, Mengyuan Zhao
Corresponding Author
Mingming Chen
Available Online April 2016.
DOI
10.2991/isaeece-16.2016.22How to use a DOI?
Keywords
double planar, film inductor, micromachining, magnetic thin film
Abstract

This paper mainly describes the design, fabrication and test of double planar thin film inductor. The thin film inductor has a sandwich structure, which consists of a double-square spiral planar Cu coil between top and bottom Ni magnetic thin films on a glass substrate; it is fabricated by dry and wet processes. The inductor is 2.7 x 1.9 mm2 in area which is suitable for a MHz switching DC - DC converter integration. The finally measurement shows that inductance of 0.71uH constant up to 1.5MHz, and a quality factor of 1.09 at 1.5 MHz.

Copyright
© 2016, the Authors. Published by Atlantis Press.
Open Access
This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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Volume Title
Proceedings of the 2016 International Symposium on Advances in Electrical, Electronics and Computer Engineering
Series
Advances in Engineering Research
Publication Date
April 2016
ISBN
978-94-6252-181-0
ISSN
2352-5401
DOI
10.2991/isaeece-16.2016.22How to use a DOI?
Copyright
© 2016, the Authors. Published by Atlantis Press.
Open Access
This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

Cite this article

TY  - CONF
AU  - Mingming Chen
AU  - Guifu Ding
AU  - Mengyuan Zhao
PY  - 2016/04
DA  - 2016/04
TI  - Characteristics of double planar thin film inductor with Ni-based magnetic film for DC/DC integration
BT  - Proceedings of the 2016 International Symposium on Advances in Electrical, Electronics and Computer Engineering
PB  - Atlantis Press
SP  - 103
EP  - 106
SN  - 2352-5401
UR  - https://doi.org/10.2991/isaeece-16.2016.22
DO  - 10.2991/isaeece-16.2016.22
ID  - Chen2016/04
ER  -