Proceedings of the 2016 International Conference on Innovative Material Science and Technology (IMST 2016)

First- and last-passage Monte Carlo algorithms for charge density on a conducting surface

Authors
Chi-Ok Hwang, James A. Given, Youngwon Kim, Sunggeun Lee, Sungbae Lee
Corresponding Author
Chi-Ok Hwang
Available Online November 2016.
DOI
10.2991/imst-16.2016.21How to use a DOI?
Keywords
monte carlo; first-passage; last-passage; charge density.
Abstract

First-passage and last-passage algorithms, which are two diffusion Monte Carlo methods, can obtain charge density on a conducting surface. In general, the first-passage algorithms have been used to obtain the capacitance of the arbitrary-shaped conductors. In contrast, the last-passage algorithm was introduced to calculate the charge density at a general point on a conducting surface by using the diffusing paths that initiate at that point. Here, the conductor was held at unit voltage without any charge outside of the conductor. The two algorithms are inherently related. The last-passage algorithm is the time reversal of the first-passage algorithm. In this paper, it is shown that Kai Lai Chung's last-passage algorithm is equivalent to the first-passage algorithm. In addition, based on the time reversality of the last-passage algorithms we extend the last-passage algorithm to calculate the charge density with a charge distribution and a dielectric interface also. Lastly, we mention the recent progress in which we can obtain the charge density on a conducting surface under the general non-constant Dirichlet boundary conditions.

Copyright
© 2016, the Authors. Published by Atlantis Press.
Open Access
This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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Volume Title
Proceedings of the 2016 International Conference on Innovative Material Science and Technology (IMST 2016)
Series
Advances in Intelligent Systems Research
Publication Date
November 2016
ISBN
978-94-6252-269-5
ISSN
1951-6851
DOI
10.2991/imst-16.2016.21How to use a DOI?
Copyright
© 2016, the Authors. Published by Atlantis Press.
Open Access
This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

Cite this article

TY  - CONF
AU  - Chi-Ok Hwang
AU  - James A. Given
AU  - Youngwon Kim
AU  - Sunggeun Lee
AU  - Sungbae Lee
PY  - 2016/11
DA  - 2016/11
TI  - First- and last-passage Monte Carlo algorithms for charge density on a conducting surface
BT  - Proceedings of the 2016 International Conference on Innovative Material Science and Technology (IMST 2016)
PB  - Atlantis Press
SP  - 139
EP  - 147
SN  - 1951-6851
UR  - https://doi.org/10.2991/imst-16.2016.21
DO  - 10.2991/imst-16.2016.21
ID  - Hwang2016/11
ER  -