3D simulations of device performance for open-shell 3D-Trench electrode detector

DOI

10.2991/ifmeita-17.2018.100How to use a DOI?

Keywords

Open-shell closing three-dimensional electrode silicon detector; Geometric capacitance; Full depletion voltage

Abstract

Therefore silicon semiconductor detectors commonly used as radiation detector. In order to improve charge collection efficiency, an Open-Shell Electrode Detector, namely OSED (Chinese Patent #ZL201710732524.3) which is based on the Closed Shell-Electrode Detector (CSED), is proposed. The electrical characteristic curves of the cylindrical open shell 3D trench electrode detector, electric potential and electric field distribution, C-V curves under different open arc length are discussed and determined in this paper, with is benefit for the design of the detector.

Copyright

© 2018, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Xiaojie Liu
AU  - Lipeng Tang
AU  - Chuan Liao
AU  - Zheng Li
PY  - 2018/02
DA  - 2018/02
TI  - 3D simulations of device performance for open-shell 3D-Trench electrode detector
BT  - Proceedings of the 2nd International Forum on Management, Education and Information Technology Application (IFMEITA 2017)
PB  - Atlantis Press
SP  - 574
EP  - 577
SN  - 2352-5398
UR  - https://doi.org/10.2991/ifmeita-17.2018.100
DO  - 10.2991/ifmeita-17.2018.100
ID  - Liu2018/02
ER  -