3D Trench Electrode Si Detector with Adjustable Central Collection Electrode

DOI

10.2991/ifmeita-17.2018.97How to use a DOI?

Keywords

3D-TCAD, Adjustable, Depletion regions, Electrical characteristics.

Abstract

In order to improve the radiation resistance of semiconductor detector, 3D trench electrode Si detector structures have been proposed by BNL at the end of 2009. In this paper, we propose a 3D trench electrode Si detector with adjustable central collection electrode, which integrates advantages of cylindrical units and parallel units. For those combine units, we use 1D Poisson equation as the first order approximation to study the changing of depletion in different regions. These results have been compared to those obtained from the full 3D simulation using a 3D-TCAD tool. According to our calculations, we designed a 3D trench electrode Si detector with adjustable central collection electrode. Furthermore electric characteristics of this type of detectors with different lengths of central collection electrode (lp+) have been simulated using the 3D-TCAD.

Copyright

© 2018, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Chuan Liao
AU  - Ya Zhang
AU  - Xiaojie Liu
AU  - Zheng Li
PY  - 2018/02
DA  - 2018/02
TI  - 3D Trench Electrode Si Detector with Adjustable Central Collection Electrode
BT  - Proceedings of the 2nd International Forum on Management, Education and Information Technology Application (IFMEITA 2017)
PB  - Atlantis Press
SP  - 562
EP  - 565
SN  - 2352-5398
UR  - https://doi.org/10.2991/ifmeita-17.2018.97
DO  - 10.2991/ifmeita-17.2018.97
ID  - Liao2018/02
ER  -