Design and majorization of SOI high temperature pressure sensor

DOI

10.2991/ifmeita-17.2018.92How to use a DOI?

Keywords

pressure sensor, SOI, high-temperature

Abstract

In high temperature harsh environments, The real-time dynamic measurements of pressure sensors are unable to carry out due to its own limitation. Thus, SOI material and MEMS processing technology are used to solve these problems. Mechanical properties stability and reliability of the sensor structure with SOI are much improved. The new high temperature pressure sensor proposed in this paper, was been studied by means of theory and simulations. The main problem, the reverse of PN junction, caused by the intrinsic excitation of the semiconductor in high temperature, was solved using the silicon on insulator (SOI) material. Then the stability and reliability of the mechanical structure of the sensitive head is guaranteed with the Micro-electromechanical system (MEMS) fabrication process. Using high temperature metal materials as the metal wire material, the package of the pressure sensor can withstand high temperature in harsh environments. The stability and sensitivity of our pressure sensors are much improved in high temperature harsh environment. By using the designing principles of high temperature pressure sensors, together with theoretics and simulations, optimism designs were worked out for various parts of sensors for harsh environments. Performance parameters and maximum operation temperatures of SOI high temperature pressure sesors studied in this paper were obtained according to test results. This work provides insights for the design of sensors that can stand for even higher temperatures.

Copyright

© 2018, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

Download article (PDF)

TY  - CONF
AU  - Zhi.Jun. Yao
AU  - Jun. Zhao
AU  - Zheng. Li
PY  - 2018/02
DA  - 2018/02
TI  - Design and majorization of SOI high temperature pressure sensor
BT  - Proceedings of the 2nd International Forum on Management, Education and Information Technology Application (IFMEITA 2017)
PB  - Atlantis Press
SP  - 533
EP  - 536
SN  - 2352-5398
UR  - https://doi.org/10.2991/ifmeita-17.2018.92
DO  - 10.2991/ifmeita-17.2018.92
ID  - Yao2018/02
ER  -