Hydrogenated amorphous silicon carbide thin films deposited by plasma-enhanced chemical vapor deposition

DOI

10.2991/icseee-15.2016.129How to use a DOI?

Keywords

Silicon, Amorphous, Carbide, bonding, PECVD.

Abstract

Hydrogenated amorphous silicon carbide thin films (a-SiC: H) were deposited by decomposition of SiH4 and CH4 gas mixtures at 200 0C. Chemical bonding configuration measurements by Fourier transform infrared absorption spectroscopy show that there are SiHn (n=1,2,3), C-SiH, non-hydrogen Si-C, Si-CH3, and CHn (n=1,2,3) radicals in the as-grown sample. Raman scattering measurement reveals a broad peak located at about 479.4 cm-1 and a weak protuberance at 970.6 cm-1. These demonstrate that there aren’t any crystalline nanoparticles and the sample is in amorphous feature.

Copyright

© 2016, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Shiguo Yang
AU  - Guozhi Wen
AU  - Yang Luo
AU  - Yi Liang
PY  - 2016/04
DA  - 2016/04
TI  - Hydrogenated amorphous silicon carbide thin films deposited by plasma-enhanced chemical vapor deposition
BT  - Proceedings of the 2015 4th International Conference on Sustainable Energy and Environmental Engineering
PB  - Atlantis Press
SP  - 755
EP  - 758
SN  - 2352-5401
UR  - https://doi.org/10.2991/icseee-15.2016.129
DO  - 10.2991/icseee-15.2016.129
ID  - Yang2016/04
ER  -