High voltage and large current dynamic test of SiC diodes and hybird module
Authors
Ao Liu, Gang Chen, Song Bai, Run Hua Huang, Yong Hong Tao, Ling Wang
Corresponding Author
Ao Liu
Available Online December 2015.
- DOI
- 10.2991/icmse-15.2015.258How to use a DOI?
- Keywords
- dynamic test; double-pulse; SiC diodes and modules.
- Abstract
High voltage and large current dynamic test for SiC diodes and hybrid module was studied. Then high voltage dynamic test for 1700V-25A 4H-SiC junction barrier schottky (JBS) diodes and high current dynamic test for a 1700V-200A half-brige SiC hybrid module were performed. With the change of test conditions, such as driving resistance and load inductance, dynamic parameters have some variation. The reverse recovery time of SiC diode and swich on/off time of SiC hybrid module under test is between 20ns to 200ns. The test got a high accuracy. These devices are very suitable for high frequency applications.
- Copyright
- © 2015, the Authors. Published by Atlantis Press.
- Open Access
- This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).
Cite this article
TY - CONF AU - Ao Liu AU - Gang Chen AU - Song Bai AU - Run Hua Huang AU - Yong Hong Tao AU - Ling Wang PY - 2015/12 DA - 2015/12 TI - High voltage and large current dynamic test of SiC diodes and hybird module BT - Proceedings of the 2015 6th International Conference on Manufacturing Science and Engineering PB - Atlantis Press SP - 1425 EP - 1430 SN - 2352-5401 UR - https://doi.org/10.2991/icmse-15.2015.258 DO - 10.2991/icmse-15.2015.258 ID - Liu2015/12 ER -