Phase Field Modeling of the Effects of Gradient Energy Coefficients on the Void-matrix Interface Thickness during Czochralski Silicon Crystal

DOI

10.2991/icmse-15.2015.154How to use a DOI?

Keywords

Silicon crystal, Czochralski process, Phase field modeling, Gradient energy coefficient, Void-matrix interface thickness

Abstract

For investigating the effects of gradient energy coefficients on the void-matrix interface thickness during Czochralski silicon single crystal, an established phase field model and the corresponding program code were used to simulate the evolution process of a single void. Based on the given criterion of interface thickness, sixteen simulating cases were performed to study the related influence laws. The results show that the void-matrix interface thickness is influenced by both of the gradient energy coefficients of composition and chemical ordering, and the increases of gradient energy coefficients contribute to the enlargement of interface thickness.

Copyright

© 2015, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - X. J. Guan
AU  - J. Wang
PY  - 2015/12
DA  - 2015/12
TI  - Phase Field Modeling of the Effects of Gradient Energy Coefficients on the Void-matrix Interface Thickness during Czochralski Silicon Crystal
BT  - Proceedings of the 2015 6th International Conference on Manufacturing Science and Engineering
PB  - Atlantis Press
SP  - 854
EP  - 859
SN  - 2352-5401
UR  - https://doi.org/10.2991/icmse-15.2015.154
DO  - 10.2991/icmse-15.2015.154
ID  - Guan2015/12
ER  -