Proceedings of the 2016 International Conference on Mechanics, Materials and Structural Engineering

Crystallization Kinetics in Ge-Sb-Te-Bi and Ge-Sb-Te-In Thin Films

Authors
Sherchenkov Alexey, Lazarenko Petr, Timoshenkov Sergey, Kozyukhin Sergey
Corresponding Author
Sherchenkov Alexey
Available Online March 2016.
DOI
10.2991/icmmse-16.2016.62How to use a DOI?
Keywords
Crystallization, Phase change memory, Ge-Sb-Te
Abstract

In this work mechanism and kinetics of crystallization for thin films on the basis of Ge-Sb-Te-Bi and Ge-Sb-Te-In perspective for phase change memory application were investigated. Possible data processing and storage times of the PCM cell were estimated. It was shown that PCM cell based on Ge2Sb2Te5+0.5 wt. % Bi have minimum data processing and maximum data storage times in comparison with the other investigated materials.

Copyright
© 2016, the Authors. Published by Atlantis Press.
Open Access
This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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Volume Title
Proceedings of the 2016 International Conference on Mechanics, Materials and Structural Engineering
Series
Advances in Engineering Research
Publication Date
March 2016
ISBN
978-94-6252-187-2
ISSN
2352-5401
DOI
10.2991/icmmse-16.2016.62How to use a DOI?
Copyright
© 2016, the Authors. Published by Atlantis Press.
Open Access
This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

Cite this article

TY  - CONF
AU  - Sherchenkov Alexey
AU  - Lazarenko Petr
AU  - Timoshenkov Sergey
AU  - Kozyukhin Sergey
PY  - 2016/03
DA  - 2016/03
TI  - Crystallization Kinetics in Ge-Sb-Te-Bi and Ge-Sb-Te-In Thin Films
BT  - Proceedings of the 2016 International Conference on Mechanics, Materials and Structural Engineering
PB  - Atlantis Press
SP  - 367
EP  - 372
SN  - 2352-5401
UR  - https://doi.org/10.2991/icmmse-16.2016.62
DO  - 10.2991/icmmse-16.2016.62
ID  - Alexey2016/03
ER  -