Electrical properties of Ge-Sb-Te-Bi Thin Films for Phase Change Memory Application

DOI

10.2991/icmmse-16.2016.61How to use a DOI?

Keywords

Phase Change Memory, Electrical Properties, Ge-Sb-Te

Abstract

In this study I-V characteristic, temperature dependence of resistivity, thermopower, were investigated for thin films on the basis of Ge2Sb2Te5 doped by Bi. Resistivities, ratio of the resistivities of amorphous and crystalline states, activation energies of conductivity, temperature of phase transition, Seebeck coefficient were estimated. Transport mechanisms in Ge2Sb2Te5 + Bi thin films were analyzed.

Copyright

© 2016, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Sherchenkov Alexey
AU  - Lazarenko Petr
AU  - Terekhov Dmitriy
AU  - Kozyukhin Sergey
PY  - 2016/03
DA  - 2016/03
TI  - Electrical properties of Ge-Sb-Te-Bi Thin Films for Phase Change Memory Application
BT  - Proceedings of the 2016 International Conference on Mechanics, Materials and Structural Engineering
PB  - Atlantis Press
SP  - 361
EP  - 366
SN  - 2352-5401
UR  - https://doi.org/10.2991/icmmse-16.2016.61
DO  - 10.2991/icmmse-16.2016.61
ID  - Alexey2016/03
ER  -