Proceedings of the 2016 International Conference on Mechanics, Materials and Structural Engineering

Electrical properties of Ge-Sb-Te-Bi Thin Films for Phase Change Memory Application

Authors
Sherchenkov Alexey, Lazarenko Petr, Terekhov Dmitriy, Kozyukhin Sergey
Corresponding Author
Sherchenkov Alexey
Available Online March 2016.
DOI
10.2991/icmmse-16.2016.61How to use a DOI?
Keywords
Phase Change Memory, Electrical Properties, Ge-Sb-Te
Abstract

In this study I-V characteristic, temperature dependence of resistivity, thermopower, were investigated for thin films on the basis of Ge2Sb2Te5 doped by Bi. Resistivities, ratio of the resistivities of amorphous and crystalline states, activation energies of conductivity, temperature of phase transition, Seebeck coefficient were estimated. Transport mechanisms in Ge2Sb2Te5 + Bi thin films were analyzed.

Copyright
© 2016, the Authors. Published by Atlantis Press.
Open Access
This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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Volume Title
Proceedings of the 2016 International Conference on Mechanics, Materials and Structural Engineering
Series
Advances in Engineering Research
Publication Date
March 2016
ISBN
978-94-6252-187-2
ISSN
2352-5401
DOI
10.2991/icmmse-16.2016.61How to use a DOI?
Copyright
© 2016, the Authors. Published by Atlantis Press.
Open Access
This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

Cite this article

TY  - CONF
AU  - Sherchenkov Alexey
AU  - Lazarenko Petr
AU  - Terekhov Dmitriy
AU  - Kozyukhin Sergey
PY  - 2016/03
DA  - 2016/03
TI  - Electrical properties of Ge-Sb-Te-Bi Thin Films for Phase Change Memory Application
BT  - Proceedings of the 2016 International Conference on Mechanics, Materials and Structural Engineering
PB  - Atlantis Press
SP  - 361
EP  - 366
SN  - 2352-5401
UR  - https://doi.org/10.2991/icmmse-16.2016.61
DO  - 10.2991/icmmse-16.2016.61
ID  - Alexey2016/03
ER  -