Properties of Different Structures of 2D MoS₂ and Their Applications in Solar Cells, Photodetectors and Transistors

DOI

10.2991/978-94-6463-518-8_10How to use a DOI?

Keywords

Molybdenum disulfide (MoS2); Two-dimensional (2D); Solar cells; Photodetectors; Transistors

Abstract

Molybdenum disulfide (MoS₂) is a promising two-dimensional (2D) nanomaterial to substitute graphene, with unique adjustable bandgap and distinctive structure. Among all 2D transition-metal dichalcogenides (TMDs), MoS₂ is extremely advantageous due to its natural layered structure. High-quality 2D MoS₂ can be obtained by mechanical peeling, instead of complex chemical synthesis process. It has many applications in different fields, such as photodetectors in optical field, solar cells in energy applications, and transistors in electronics. The absorption of solar energy by monolayer MoS₂ solar cells is one order of magnitude higher than that of silicon. Photodetectors based on MoS₂ heterojunctions offer much faster charge transfer and photoresponse, with more functionality than a single detector. MoS₂ can be used to construct interband tunnel field-effect transistors (FETs) with lower power consumption. The different MoS₂ structures, including the bulk, monolayer, few layer and multi-layer, will be discussed in this work, with a focus on their applications on solar cells, photodetectors and transistors.

Copyright

© 2024 The Author(s)

Open Access

Open Access This chapter is licensed under the terms of the Creative Commons Attribution-NonCommercial 4.0 International License (http://creativecommons.org/licenses/by-nc/4.0/), which permits any noncommercial use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license and indicate if changes were made.

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TY  - CONF
AU  - Yuhang Zhou
PY  - 2024
DA  - 2024/09/28
TI  - Properties of Different Structures of 2D MoS₂ and Their Applications in Solar Cells, Photodetectors and Transistors
BT  - Proceedings of the 2024 International Conference on Mechanics, Electronics Engineering and Automation (ICMEEA 2024)
PB  - Atlantis Press
SP  - 86
EP  - 92
SN  - 2352-5401
UR  - https://doi.org/10.2991/978-94-6463-518-8_10
DO  - 10.2991/978-94-6463-518-8_10
ID  - Zhou2024
ER  -