Proceedings of the Second International Conference on Emerging Trends in Engineering (ICETE 2023)

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Modeling and Simulation of Multi Gate MOSFET with Reduced Short Channel Effects for High Power Applications

Authors
Naga Lakshmi Yarlagadda1, 2, *, Yogesh Kumar Verma1, R. Santosh3, G. Amarnath4
1School of Electronics and Electrical Engineering, Lovely Professional University, Jalandhar, Punjab, India
2Department of Electronic and Communication Engineering, Geethanjali College of Engineering and Technology, Hyderabad, India
3Department of Electronic and Communication Engineering, Velagapudi Ramakrishna Siddhartha Engineering College, Vijayawada, India
4Department of Electronic and Communication Engineering, Marri Laxman Reddy Institute of Technology and Management, Hyderabad, India
*Corresponding author. Email: nagalakshmi.yarlagadda@gmail.com Email: routus@gmail.com
Corresponding Author
Naga Lakshmi Yarlagadda
Available Online 9 November 2023.
DOI
10.2991/978-94-6463-252-1_59How to use a DOI?
Keywords
multigate MOSFET; short channel effects; channel potential; drain resistance effect; overlap length
Abstract

The Multigate (Double-gate) MOSFET has been proposed for high voltage and high-power applications with decreased short channel effects and drain current with gate overlap. This model takes in to account the short-channel effects (SCEs) in thin-layered MOSFETs with large drain regions by incorporating the drain resistance effect in the device. As a result, the device’s SCEs are reduced. The gate contact overlapped region significantly affects the device operation for high-voltage FETs. These effects are modeled by self-consistent solutions of available multigate MOSFET device models with potential distribution. Multi-gate devices offer a significant benefit of enhanced SCE, as the gate controls the channel electrostatically from multiple sides and increased on state drive current which results in faster circuit speed. The demonstrated model can be further applied for size limitations in the modeling of multigate MOSFETs.

Copyright
© 2023 The Author(s)
Open Access
Open Access This chapter is licensed under the terms of the Creative Commons Attribution-NonCommercial 4.0 International License (http://creativecommons.org/licenses/by-nc/4.0/), which permits any noncommercial use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license and indicate if changes were made.

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Volume Title
Proceedings of the Second International Conference on Emerging Trends in Engineering (ICETE 2023)
Series
Advances in Engineering Research
Publication Date
9 November 2023
ISBN
978-94-6463-252-1
ISSN
2352-5401
DOI
10.2991/978-94-6463-252-1_59How to use a DOI?
Copyright
© 2023 The Author(s)
Open Access
Open Access This chapter is licensed under the terms of the Creative Commons Attribution-NonCommercial 4.0 International License (http://creativecommons.org/licenses/by-nc/4.0/), which permits any noncommercial use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license and indicate if changes were made.

Cite this article

risenwbib
TY  - CONF
AU  - Naga Lakshmi Yarlagadda
AU  - Yogesh Kumar Verma
AU  - R. Santosh
AU  - G. Amarnath
PY  - 2023
DA  - 2023/11/09
TI  - Modeling and Simulation of Multi Gate MOSFET with Reduced Short Channel Effects for High Power Applications
BT  - Proceedings of the Second International Conference on Emerging Trends in Engineering (ICETE 2023)
PB  - Atlantis Press
SP  - 568
EP  - 578
SN  - 2352-5401
UR  - https://doi.org/10.2991/978-94-6463-252-1_59
DO  - 10.2991/978-94-6463-252-1_59
ID  - Yarlagadda2023
ER  -