The Integrity of 28nm HK/MG nMOSFETs Probed with Drain Bias Stress
Authors
Mu-Chun Wang, Shea-Jue Wang, Shuang-Yuan Chen, Chao-Nan Wei, Dai-Heng Wu, Jun-Wen Cai, Wen-How Lan
Corresponding Author
Mu-Chun Wang
Available Online April 2016.
- DOI
- 10.2991/icemie-16.2016.17How to use a DOI?
- Keywords
- impact ionization; leakage; DIBL; MOSFET; drain; trap; GCIP effect; high-k
- Abstract
Adopting coupling drain bias stresses to probe the device integrity achieved the good consequences in the study of device leakage, interface state, and oxide trap causing some degradation effect in the tested devices and observed the GCIP effect at the higher drain stress conditions.
- Copyright
- © 2016, the Authors. Published by Atlantis Press.
- Open Access
- This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).
Cite this article
TY - CONF AU - Mu-Chun Wang AU - Shea-Jue Wang AU - Shuang-Yuan Chen AU - Chao-Nan Wei AU - Dai-Heng Wu AU - Jun-Wen Cai AU - Wen-How Lan PY - 2016/04 DA - 2016/04 TI - The Integrity of 28nm HK/MG nMOSFETs Probed with Drain Bias Stress BT - Proceedings of the 2016 International Conference on Electrical, Mechanical and Industrial Engineering PB - Atlantis Press SP - 67 EP - 71 SN - 2352-5401 UR - https://doi.org/10.2991/icemie-16.2016.17 DO - 10.2991/icemie-16.2016.17 ID - Wang2016/04 ER -