A THRESHOLD VOLTAGE MODEL FOR THE IMOS DEVICE USING HETERO STRUCTURE

DOI

10.2991/iccsee.2013.423How to use a DOI?

Keywords

avalanche breakdown, Hetero IMOS, threshold voltage

Abstract

IMOS allows very sharp subthreshold slopes, even down to a few mV/dec at room temperature. However, the device has serious reliability problems, such as large threshold voltage shifts, caused by hot carrier induced damage and the large supply voltage. Hetero IMOS, using the small bandgap material as the channel material, improves device reliability and decreases power consumption by reducing off-state currents and features a lower breakdown voltage compared to conventional IMOS. In this paper, a threshold voltage model is proposed in different distribution of surface electric field and in the condition of avalanche breakdown. The result is analyzed with the simulation data. It promotes the application of IMOS to VLSI design.

Copyright

© 2013, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Heming Yao
PY  - 2013/03
DA  - 2013/03
TI  - A THRESHOLD VOLTAGE MODEL FOR THE IMOS DEVICE USING HETERO STRUCTURE
BT  - Proceedings of the 2nd International Conference on Computer Science and Electronics Engineering (ICCSEE 2013)
PB  - Atlantis Press
SP  - 1690
EP  - 1693
SN  - 1951-6851
UR  - https://doi.org/10.2991/iccsee.2013.423
DO  - 10.2991/iccsee.2013.423
ID  - Yao2013/03
ER  -