Influence of Laser Incident Energy on Chemical Composition, Crystal Structure, Morphology and Band Gap of Cu2ZnSnS4 Thin Films by Pulsed Laser Deposition
- DOI
- 10.2991/emeit.2012.237How to use a DOI?
- Keywords
- Cu2ZnSnS4, thin film, pulsed laser deposition, laser incident energy
- Abstract
The Cu2ZnSnS4 (CZTS) thin films were successfully prepared on glass substrate by pulsed laser deposition (PLD) using CZTS target. The laser incident energy was varied from 3 J•cm-2 to 6 J•cm-2 at the interval of 1 J•cm-2, and its influence on chemical composition, crystal structure, morphology and band gap of CZTS thin films was investigated by energy dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD), atomic force microscopy (AFM) and ultraviolet-visible-near infrared (UV-Vis-NIR) absorption spectra, respectively. The result of EDS indicated that these CZTS thin films were Cu-rich and S-poor. The XRD study showed CZTS thin films exhibited strong preferential orientation of grains along [112] direction. The band gap of CZTS thin films was 1.72, 1.37, 1.25 and 1.11 eV corresponding to incident laser energy of 3, 4, 5 and 6 J•cm-2.
- Copyright
- © 2012, the Authors. Published by Atlantis Press.
- Open Access
- This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).
Cite this article
TY - CONF AU - Yanan Wen AU - Lin Li AU - Yan Dong AU - Min Yao AU - Qi Liang PY - 2012/09 DA - 2012/09 TI - Influence of Laser Incident Energy on Chemical Composition, Crystal Structure, Morphology and Band Gap of Cu2ZnSnS4 Thin Films by Pulsed Laser Deposition BT - Proceedings of the 2nd International Conference on Electronic & Mechanical Engineering and Information Technology (EMEIT 2012) PB - Atlantis Press SP - 1088 EP - 1091 SN - 1951-6851 UR - https://doi.org/10.2991/emeit.2012.237 DO - 10.2991/emeit.2012.237 ID - Wen2012/09 ER -