Simulation Study on Internal Transparent Collector IGBT Using Superjunction Drift

DOI

10.2991/eeic-13.2013.78How to use a DOI?

Keywords

superjunction; local carrier lifetime; internal transparent collector; IGBT

Abstract

The super junction (SJ) drift is used in internal transparent collector IGBT. The influences of position of local carrier lifetime region, local carrier lifetime, and buffer layer doping level on the devices’ trade-off characteristics have been simulation studied. The results show that for given local carrier liftetime, the turn-off losses may have a valley value Eoffmin. The higher local carrier lifetime is, the higher Eoffmin will be. Several factors are at work. Competition effects for excess carrier extraction through reverse biased super junction and forward biased collector may be one reason. Infinite excess carrier recombination velocity in local carrier lifetime control region leads to the back-emitter injection efficiency e be no less than certain value. In addition; increasing buffer layer doping level appropriately could win better trade-off and wider trade-off range.

Copyright

© 2013, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

Download article (PDF)

TY  - CONF
AU  - Dongqing Hu
AU  - Peihao Lv
AU  - Yunpeng Jia
PY  - 2013/12
DA  - 2013/12
TI  - Simulation Study on Internal Transparent Collector IGBT Using Superjunction Drift
BT  - Proceedings of the 3rd International Conference on Electric and Electronics
PB  - Atlantis Press
SP  - 333
EP  - 336
SN  - 1951-6851
UR  - https://doi.org/10.2991/eeic-13.2013.78
DO  - 10.2991/eeic-13.2013.78
ID  - Hu2013/12
ER  -