Study on 2000V SiC JBS Diodes

DOI

10.2991/eeic-13.2013.72How to use a DOI?

Keywords

4H-SiC; JBS; Floating guard rings

Abstract

High voltage 4H-SiC Ti schottky junction barrier schottky (JBS) diode with breakdown voltage of 2000V and forward current of 2A has been fabricated. A low reverse leakage current below 1.9×10-6A/cm2 at the bias voltage of -2kV has been obtained. The forward on-state current was 2A at VF = 1.9V and 5A at VF = 3V. The chip is 2.3mm×2.3mm. The turn-on voltage is about 1.0V. The on-state resistance is 19.3m ·cm2. The doping and thickness of the N-type drift layer and the device structure have been performed by numerical simulations. The SiC JBS devices have been fabricated and the processes were in detail. The die was packaged with SMB mode. The thickness of the N- epilayer is 17µm, and the doping concentration is 4.6×1015cm 3. A floating guard rings edge termination have been used to improve the effectiveness of the edge termination technique. By using Ti/Ni/Ag multilayer metal structure, the double side Ag process of 4H-SiC JBS diode is formed. We use the PECVD SizNy/SiO2 as the passivation dielectric and a non photosensitive polyamide as the passivation in the end.

Copyright

© 2013, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Gang Chen
AU  - Lin Wang
AU  - Runhua Huang
AU  - Song Bai
AU  - Yun Li
PY  - 2013/12
DA  - 2013/12
TI  - Study on 2000V SiC JBS Diodes
BT  - Proceedings of the 3rd International Conference on Electric and Electronics
PB  - Atlantis Press
SP  - 308
EP  - 310
SN  - 1951-6851
UR  - https://doi.org/10.2991/eeic-13.2013.72
DO  - 10.2991/eeic-13.2013.72
ID  - Chen2013/12
ER  -