Thermal Breakdown Modeling and Simulation of GGNMOS under ESD Stress

DOI

10.2991/eeic-13.2013.8How to use a DOI?

Keywords

ESD; GGNMOS; Electrothermal effects; Modeling; Reliability design

Abstract

Based on the thermal breakdown behavior of grounded-gated n-channel metal-oxide-semiconductor (GGNMOS) under Electrostatic Discharge(ESD) conditions, the electrothermal models are built and optimized by modeling thermal breakdown temperature, heat source and temperature-dependent parameters, which are coupled with the electrical characteristics of GGNMOS. Thus, the thermal breakdown current It2, which is also the failure threshold of GGNMOS, can be simulated by the models. A comparison between the transmission line pulsing (TLP) testing results and simulation results shows that the maximum error value of It2 is only 8.95 , which confirms the accuracy of the models. The models can be provided for the thermal breakdown simulation of GGNMOS with various process parameters and different ESD pulse duration owing to the physical-level modeling. The studies have great significance for the reliability design of microelectronic device.

Copyright

© 2013, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Yao Liu
AU  - Yingjun Gao
PY  - 2013/12
DA  - 2013/12
TI  - Thermal Breakdown Modeling and Simulation of GGNMOS under ESD Stress
BT  - Proceedings of the 3rd International Conference on Electric and Electronics
PB  - Atlantis Press
SP  - 31
EP  - 35
SN  - 1951-6851
UR  - https://doi.org/10.2991/eeic-13.2013.8
DO  - 10.2991/eeic-13.2013.8
ID  - Liu2013/12
ER  -