A New Preparation Process of Double-gate FETs Based on Monolayer Graphene Nanoflakes

DOI

10.2991/ame-17.2017.65How to use a DOI?

Keywords

Monolayer graphene nanoflakes, Double-gate field effect transistor (DG-FET), Characterization of DG-FET

Abstract

A new preparation process to product double-gate field effect transistor (DG-FET) of monolayer graphene nanoflakes, fabricated by mechanical exfoliation, was systematically studied in this paper. The graphene DG-FETs are bipolar and possess high gate modulation (On/Off ratio is large), and higher regulation accuracy, which is double-gate regulation. These results showed the extraordinary performance of the double-gate FETs based on monolayer graphene, which might open a new road to develop graphene-based material in the application of double-gate FETs.

Copyright

© 2017, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Zong-Qi Bai
AU  - Ka-Di Zhu
AU  - Hang Yang
AU  - Xue-Ao Zhang
PY  - 2017/04
DA  - 2017/04
TI  - A New Preparation Process of Double-gate FETs Based on Monolayer Graphene Nanoflakes
BT  - Proceedings of the 3rd Annual International Conference on Advanced Material Engineering (AME 2017)
PB  - Atlantis Press
SP  - 397
EP  - 401
SN  - 2352-5401
UR  - https://doi.org/10.2991/ame-17.2017.65
DO  - 10.2991/ame-17.2017.65
ID  - Bai2017/04
ER  -