Effect of Single Sio2 Layer Incorporation on Electrical Performances of Metal-insulator-metal Capacitors with Al2O3-Hfo2-Al2O3 Dielectrics

DOI

10.2991/ame-17.2017.1How to use a DOI?

Keywords

MIM (metal-insulator-metal), VCC (voltage coefficients of capacitance), ALD (atomic layer deposition).

Abstract

The metal-insulator-metal (MIM) capacitors with Al2O3/HfO2/Al2O3 (AHA) and Al2O3/HfO2/SiO2/HfO2/Al2O3 (AHSHA) dielectric structure using atomic layer deposition (ALD) technique have been fabricated. It is demonstrated that the dielectric loss at higher applied frequency and quadratic VCC in high- MIM capacitors can be decreased by means of introducing an ultrathin layer of ALD SiO2, which has an opposite sign of quadratic VCC against the HfO2 layers. A high capacitance density of 8.1 fF/ m2 and the low leakage current density of 2.5 10-7 A/cm2 at 1 MV/cm can be achieved with the dielectric structure as AHSHA. In addition, the breakdown electrical field in AHSHA dielectric is obviously improved. Furthermore, with the survey of different leakage models, the Schottky emission has been considered as the dominating conduction mechanism for both of the AHA and AHSHA capacitors.

Copyright

© 2017, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Li-Feng Zhang
AU  - Sai-Sheng Xu
PY  - 2017/04
DA  - 2017/04
TI  - Effect of Single Sio2 Layer Incorporation on Electrical Performances of Metal-insulator-metal Capacitors with Al2O3-Hfo2-Al2O3 Dielectrics
BT  - Proceedings of the 3rd Annual International Conference on Advanced Material Engineering (AME 2017)
PB  - Atlantis Press
SP  - 1
EP  - 9
SN  - 2352-5401
UR  - https://doi.org/10.2991/ame-17.2017.1
DO  - 10.2991/ame-17.2017.1
ID  - Zhang2017/04
ER  -