Fabrication and Properties of Amorphous IGZO-TFT

DOI

10.2991/wartia-18.2018.50How to use a DOI?

Keywords

IGZO; TFT; Magnetron Sputtering; Active Layer

Abstract

With the introduction and development of amorphous InGaZnO (a-IGZO or IGZA) in display and other fields, the fabrication and properties of novel semiconductor devices, amorphous IGZO-TFT has become a hot topic in microelectronics and other related disciplines. In this paper, the length and width of IGZO film in IGZO-TFT which is prepared by magnetron sputtering are all 50 . The results show that the threshold voltage of the device is 4.5V, the sub-threshold swing is small, the gate bias has a good control effect on the leakage current of the device, and the clamping characteristics of the device are also good.

Copyright

© 2018, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Qingru Lu
AU  - Xiaodong Huang
AU  - Fan Li
AU  - Haiyan Xin
AU  - Hui Huang
PY  - 2018/09
DA  - 2018/09
TI  - Fabrication and Properties of Amorphous IGZO-TFT
BT  - Proceedings of the 4th Workshop on Advanced Research and Technology in Industry (WARTIA 2018)
PB  - Atlantis Press
SP  - 279
EP  - 282
SN  - 2352-5401
UR  - https://doi.org/10.2991/wartia-18.2018.50
DO  - 10.2991/wartia-18.2018.50
ID  - Lu2018/09
ER  -