Proceedings of the 4th Workshop on Advanced Research and Technology in Industry (WARTIA 2018)

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A X-band Microwave Monolithic Low-noise Amplifer

Authors
Dongxu Yue, Yao Yao, Kaiqi Wan
Corresponding Author
Dongxu Yue
Available Online September 2018.
DOI
10.2991/wartia-18.2018.20How to use a DOI?
Keywords
X-band, LNA, low noise, amplifer
Abstract

a X-band microwave monolithic low-noise amplifer is presented in this paper. This LNA has been realized by 0.15um GaAs process.it exhibits high performance: over 8GHz~12GHz, power gain is above 20dB; the ripple variation of power gain is less than ±0.7dB; The 1dB compression point is more than 10dBm; input return loss is lower than -15dB; output return loss is lower than -15dB; Current less than 40mA.

Copyright
© 2018, the Authors. Published by Atlantis Press.
Open Access
This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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Volume Title
Proceedings of the 4th Workshop on Advanced Research and Technology in Industry (WARTIA 2018)
Series
Advances in Engineering Research
Publication Date
September 2018
ISBN
978-94-6252-597-9
ISSN
2352-5401
DOI
10.2991/wartia-18.2018.20How to use a DOI?
Copyright
© 2018, the Authors. Published by Atlantis Press.
Open Access
This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

Cite this article

risenwbib
TY  - CONF
AU  - Dongxu Yue
AU  - Yao Yao
AU  - Kaiqi Wan
PY  - 2018/09
DA  - 2018/09
TI  - A X-band Microwave Monolithic Low-noise Amplifer
BT  - Proceedings of the 4th Workshop on Advanced Research and Technology in Industry (WARTIA 2018)
PB  - Atlantis Press
SP  - 120
EP  - 125
SN  - 2352-5401
UR  - https://doi.org/10.2991/wartia-18.2018.20
DO  - 10.2991/wartia-18.2018.20
ID  - Yue2018/09
ER  -