Design and Realization of Multi-stage Radio Frequency Power Amplifiers Based on GaN HEMT

DOI

10.2991/wartia-17.2017.72How to use a DOI?

Keywords

Radio Frequency Power Amplifier; L Frequency Band; Broadband

Abstract

This article provides the design of multi-stage radio frequency power amplifiers which adopt transistors made of semiconductor materials of the third generation on the basis of taking into consideration criterions referring to efficiency, bandwidth and linearity. The first step is to conduct an experimental research on the circuit of the single-tube radio frequency power amplifier, and then, establish a three-stage pre-driving circuit; and constituting a final power amplifier assembly; finally, perform cascading on the pre-driving circuit and the final-stage power driving circuit to form the final radio frequency large-power amplifier. The simulation result indicates that the linearity of the multi-stage is good, so the effect is good.

Copyright

© 2017, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Yan An
AU  - Yankai Liu
PY  - 2017/11
DA  - 2017/11
TI  - Design and Realization of Multi-stage Radio Frequency Power Amplifiers Based on GaN HEMT
BT  - Proceedings of the 3rd Workshop on Advanced Research and Technology in Industry (WARTIA 2017)
PB  - Atlantis Press
SP  - 374
EP  - 378
SN  - 2352-5401
UR  - https://doi.org/10.2991/wartia-17.2017.72
DO  - 10.2991/wartia-17.2017.72
ID  - An2017/11
ER  -