Preparation of low voltage ZnO Varistor using point seed

DOI

10.2991/mmme-16.2016.88How to use a DOI?

Keywords

ZnO; varistor ceramics; low voltage; point seed

Abstract

The low pressure of ZnO varistor ceramics were prepared with 99.5 mol % ZnO +0.5 mol % CaCO3. Subse-quently, placed in a constant temperature conditions of 1420 for 10 h, and cooking in boiling water long enough. The microstructure of the particle size analyzed by optical microscope, the doped ZnO varistors sheet seed analyzed by field emission scanning electron microscopy, the phase structure analyzed by X- ray diffrac-tion. The results showed that this method can be prepared the best electrical properties of low-voltage ZnO varistor ceramics. The varistor voltage is 11 V/mm, the leakage current is 0.018 mA and nonlinear coefficient it is 15.6.

Copyright

© 2016, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Zhefeng Xu
AU  - Ju Rong
AU  - Xiaohua Yu
AU  - Zhaolin Zhan
PY  - 2016/10
DA  - 2016/10
TI  - Preparation of low voltage ZnO Varistor using point seed
BT  - Proceedings of the 2016 4th International Conference on Mechanical Materials and Manufacturing Engineering
PB  - Atlantis Press
SP  - 388
EP  - 391
SN  - 2352-5401
UR  - https://doi.org/10.2991/mmme-16.2016.88
DO  - 10.2991/mmme-16.2016.88
ID  - Xu2016/10
ER  -