Investigation of Texturization for Monocrystalline Silicon Wafers with NaOH and Na2B4O7 ú10H2O Solutions

DOI

10.2991/mmebc-16.2016.312How to use a DOI?

Keywords

Texturing, Monocrystalline silicon wafers, NaOH, Na2B4O7 -10H2O solution, Raman basal.

Abstract

NaOH and Na2B4O7 -10H2O solutions of texturization were investigated and a series of comparative experiments were made by our group. The surface microstructures studied with a scanning electronic microscope (SEM). The different etching time and the different concentration of the solution have a larger effect on the pyramid density and the pyramid size. The SEM pictures showed that the surfaces covered with more perfect uniformly pyramid structures was obtained after texturing with NaOH of 2wt% and Na2B4O7 -10H2O of 2wt% solutions at 80 and 25min. The pyramid density was 81.8% and the mean size was 1.75 m. This result showed the method based on NaOH and Na2B4O7 -10H2O solutions was a promising method for large-scale industrial applications for Raman basal.

Copyright

© 2016, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Jinbao Chen
AU  - Ning Zhang
AU  - Shiqing Man
AU  - Pan He
AU  - Qiaoyun Ye
PY  - 2016/06
DA  - 2016/06
TI  - Investigation of Texturization for Monocrystalline Silicon Wafers with NaOH and Na2B4O7 ú10H2O Solutions
BT  - Proceedings of the 2016 6th International Conference on Machinery, Materials, Environment, Biotechnology and Computer
PB  - Atlantis Press
SP  - 1532
EP  - 1536
SN  - 2352-5401
UR  - https://doi.org/10.2991/mmebc-16.2016.312
DO  - 10.2991/mmebc-16.2016.312
ID  - Chen2016/06
ER  -