Theory Research on the Solar Cell Martial of GaN by a Novel Method

DOI

10.2991/mce-14.2014.151How to use a DOI?

Keywords

Solar cell; GaN; Strain; optical; SiNx

Abstract

Solar cell material GaN films were grown on 6H-SiC by metalorganic chemical vapor deposition (MOCVD). An in situ SiNx interlayer was employed during the growth process, which acted as a nano-mask to promote epitaxial lateral overgrowth. The threading dislocations (TDs) density in the films may be reduced to 1.7×108 cm 2 by the SiNx interlayer. The TD reduction method relies on the formation of facetted islands on the SiNx-treated GaN surface. Some TDs bend to the facets of GaN islands, some TDs with an opposite Burgers vector could be annihilated when bending over by 90° and forming half-loops after reacting with each other at the interface. The improvement of surface morphology, optical quality and train relaxation were achieved by the SiNx interlayer also.

Copyright

© 2014, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Fengqi Quan
AU  - Hongyu Zhang
AU  - Peiyuan Cong
AU  - Haijun Yu
AU  - Hao Huang
PY  - 2014/03
DA  - 2014/03
TI  - Theory Research on the Solar Cell Martial of GaN by a Novel Method
BT  - Proceedings of the 2014 International Conference on Mechatronics, Control and Electronic Engineering
PB  - Atlantis Press
SP  - 675
EP  - 678
SN  - 1951-6851
UR  - https://doi.org/10.2991/mce-14.2014.151
DO  - 10.2991/mce-14.2014.151
ID  - Quan2014/03
ER  -