Sulfur Passivation of GaAsSb alloy layer Surfaces: Comparison of Ammonium Sulfide and Disulfur Dichloride Solutions

DOI

10.2991/lemcs-15.2015.97How to use a DOI?

Keywords

Component; GaAsSb; Passivation; (NH4)2S; S2Cl2; Photoluminescence

Abstract

In this paper, (NH4)2S and S2Cl2 are used as passivating agent for the sulphuration treatment to GaAs0.03Sb0.97. The effect of surface passivation of GaAs0.03Sb0.97 by (NH4)2S and S2Cl2 treatment is investigated by using photoluminescence (PL), Atomic Force Microscope (AFM). Compared with the pristine sample, the PL intensities of GaAs0.03Sb0.97 that treated by (NH4)2S and S2Cl2 both are increased significantly. The PL intensity is strongly dependent on passivation time. For the 10s S2Cl2-treated sample, the peak intensity is about 1.4 times larger than 20 min (NH4)2S-treated sample. Meanwhile, AFM images indicate that the roughness of the S2Cl2 treated sample is smaller than the (NH4)2S treated sample. Thus, S2Cl2 passivation is an effective method in improving the optical properties of GaAs0.03Sb0.97 material.

Copyright

© 2015, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Shouzhu Niu
AU  - Dan Fang
AU  - Jilong Tang
AU  - Fang Fang
AU  - Xuan Fang
AU  - Jinhua Li
AU  - Xiaohua Wang
AU  - Zhipeng Wei
PY  - 2015/07
DA  - 2015/07
TI  - Sulfur Passivation of GaAsSb alloy layer Surfaces: Comparison of Ammonium Sulfide and Disulfur Dichloride Solutions
BT  - Proceedings of the International Conference on Logistics, Engineering, Management and Computer Science
PB  - Atlantis Press
SP  - 511
EP  - 514
SN  - 1951-6851
UR  - https://doi.org/10.2991/lemcs-15.2015.97
DO  - 10.2991/lemcs-15.2015.97
ID  - Niu2015/07
ER  -