Proceedings of the International Conference on Logistics, Engineering, Management and Computer Science

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Research on N-face GaN for solar cells based on MOCVD method

Authors
Tongwei Yu, Yuqiu Sui, Xu Huang, Chenggang Wang
Corresponding Author
Tongwei Yu
Available Online May 2014.
DOI
10.2991/lemcs-14.2014.264How to use a DOI?
Keywords
Solar Cell; MOCVD; N-face; GaN; PL
Abstract

The N face GaN epilayer was prepared on the C face SiC substrate by MOCVD system, and the basic character of the N face GaN was vestegated. A large number of Ga vacancies was formed by a hot phosphoric acid solution etching, which brought a yellow luminescence in the room temperature photoluminescence spectra.

Copyright
© 2014, the Authors. Published by Atlantis Press.
Open Access
This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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Volume Title
Proceedings of the International Conference on Logistics, Engineering, Management and Computer Science
Series
Advances in Intelligent Systems Research
Publication Date
May 2014
ISBN
978-94-6252-010-3
ISSN
1951-6851
DOI
10.2991/lemcs-14.2014.264How to use a DOI?
Copyright
© 2014, the Authors. Published by Atlantis Press.
Open Access
This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

Cite this article

risenwbib
TY  - CONF
AU  - Tongwei Yu
AU  - Yuqiu Sui
AU  - Xu Huang
AU  - Chenggang Wang
PY  - 2014/05
DA  - 2014/05
TI  - Research on N-face GaN for solar cells based on MOCVD method
BT  - Proceedings of the International Conference on Logistics, Engineering, Management and Computer Science
PB  - Atlantis Press
SP  - 1177
EP  - 1180
SN  - 1951-6851
UR  - https://doi.org/10.2991/lemcs-14.2014.264
DO  - 10.2991/lemcs-14.2014.264
ID  - Yu2014/05
ER  -