Dependence on working pressure of amorphous GaAs prepared by RF magnetron sputtering

DOI

10.2991/lemcs-14.2014.197How to use a DOI?

Keywords

Amorphous;GaAs;properties;working pressure;structure

Abstract

We prepared amorphous GaAs (a-GaAs) films by an RF magnetron sputtering method and investigated the influence of working pressure on the structure, composition, optical and electrical properties. The experimental data suggest the films prepared above 0.5 Pa are amorphous and the Ga to As concentration ratio decreases when increasing working pressure .The optical gap, resistivity and photosensitive increase with increasing working pressure. These findings suggest that working gas pressure is very important to control structure, chemical composition, optical and electrical properties of a-GaAs films prepared by magnetron sputtering method. These results were analyzed in terms of the effect of gas pressure on defect and band-tail state densities in a-GaAs films.

Copyright

© 2014, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Yanping Yao
AU  - Baoxue Bo
PY  - 2014/05
DA  - 2014/05
TI  - Dependence on working pressure of amorphous GaAs prepared by RF magnetron sputtering
BT  - Proceedings of the International Conference on Logistics, Engineering, Management and Computer Science
PB  - Atlantis Press
SP  - 867
EP  - 870
SN  - 1951-6851
UR  - https://doi.org/10.2991/lemcs-14.2014.197
DO  - 10.2991/lemcs-14.2014.197
ID  - Yao2014/05
ER  -