Effects of Structure Parameters on Temperature Characteristics of Multiple Quantum Well Ring Laser

DOI

10.2991/lemcs-14.2014.8How to use a DOI?

Keywords

temperature characteristics; semiconductor ring laser; multiple quantum well; gallium arsenid

Abstract

Due to the potential application in all-optical signal processing, semiconductor ring laser (SRL) has become one of research hotspots in the present. In this paper, an equivalent SRL was modeled utilizing a numerical device simulator (ATLAS), and the effects of structure parameter on the temperature characteristics of multiple quantum well SRL were simulated and analyzed with temperature range from 260K to 460K. The simulation results indicated that an optimal quantum well structure with well width around 20nm and well number of five existed for the lowest threshold current density. And the ring radius has little effect on the temperature characteristics of differential quantum efficiency and lasing wavelength.

Copyright

© 2014, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Jing Guo
AU  - Sheng Xie
AU  - Hao Wang
AU  - Weilian Guo
PY  - 2014/05
DA  - 2014/05
TI  - Effects of Structure Parameters on Temperature Characteristics of Multiple Quantum Well Ring Laser
BT  - Proceedings of the International Conference on Logistics, Engineering, Management and Computer Science
PB  - Atlantis Press
SP  - 30
EP  - 33
SN  - 1951-6851
UR  - https://doi.org/10.2991/lemcs-14.2014.8
DO  - 10.2991/lemcs-14.2014.8
ID  - Guo2014/05
ER  -