Excess Noise Factor of a-Si:H/a-SiC:H Separated Absorption and Multiplication Region Superlattice-like Avalanche Photodiodes (SAM-SAPDs)

DOI

10.2991/jcis.2006.309How to use a DOI?

Keywords

excess noise factor, mean multiplication, ionization rate

Abstract

In this paper, an a-Si:H/a-SiC:H separated absorption and multiplication region superlattice avalanche photodiode (SAM-SAPD) is fabricated successfully by using combined effect of band edge discontinuity and build-in potential in p-n junction. We discuss the relationships among excess noise factor (Fe), mean multiplication (Me), and the ionization rate (ks) for this SAM-SAPD. Lastly, make comparisons between the theoretical calculations and the experimental results for Fe vs. Me . In order to prove that the theoretical calculations can fit well with the experimental data, we make the suppositions for the absorption region and the ionization coefficients for each layer of the proposed SAM-SAPD.

Copyright

© 2006, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Neng-Fu Shih
AU  - Huei -Ching Huang
AU  - Chung-Yuan Kung
AU  - Chun-Chih Chiu
AU  - Hong Jyh-Wong
PY  - 2006/10
DA  - 2006/10
TI  - Excess Noise Factor of a-Si:H/a-SiC:H Separated Absorption and Multiplication Region Superlattice-like Avalanche Photodiodes (SAM-SAPDs)
BT  - Proceedings of the 9th Joint International Conference on Information Sciences (JCIS-06)
PB  - Atlantis Press
SN  - 1951-6851
UR  - https://doi.org/10.2991/jcis.2006.309
DO  - 10.2991/jcis.2006.309
ID  - Shih2006/10
ER  -