The Characteristic of a 3.5 GHz Circular Patch Antenna Using Open-Ring Artificial Dielectric

DOI

10.2991/aer.k.211106.062How to use a DOI?

Keywords

5G antenna; circular patch; open-ring artificial dielectric

Abstract

The circular patch microstrip antenna is a device that supports 5G technology because it has a low profile and small dimensions. The circular patch antenna generally constructs of 3 layers of an electromagnetic material. The materials are a good conductor as the radiator and the ground plane and a natural dielectric as the substrate. Along with telecommunication developments, research in the field of antennas is significantly growing. The characteristics of the antennas must be adaptive to these telecommunication developments. One of the antenna research as the solution is an introduction to artificial electromagnetic material. Artificial dielectric is one of the artificial electromagnetic materials. As we have known, a single circular patch antenna has a narrow bandwidth (less than 5% of the center frequency) and a low return loss. This paper proposes an open-ring artificial dielectric. The proposed artificial dielectric is used to improve the bandwidth and the return loss. Furthermore, the circular patch antenna with and without the open-ring dielectric is proposed and conventional. The result shows that the proposed antenna has a wider bandwidth, 8.94%, a higher gain, 0.78 %, and a higher return loss at the center frequency, 5.25% higher than the conventional antenna. From these results, the open-ring artificial dielectric can improve the characteristics of the conventional antenna.

Copyright

© 2021 The Authors. Published by Atlantis Press International B.V.

Open Access

This is an open access article under the CC BY-NC license.

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TY  - CONF
AU  - Yuliana Nur Rahmawati
AU  - Hepi Ludiyati
AU  - Sardjito
PY  - 2021
DA  - 2021/11/23
TI  - The Characteristic of a 3.5 GHz Circular Patch Antenna Using Open-Ring Artificial Dielectric
BT  - Proceedings of the 2nd International Seminar of Science and Applied Technology (ISSAT 2021)
PB  - Atlantis Press
SP  - 387
EP  - 393
SN  - 2352-5401
UR  - https://doi.org/10.2991/aer.k.211106.062
DO  - 10.2991/aer.k.211106.062
ID  - Rahmawati2021
ER  -