Discussion about Replacing Ferrite Inductance with Amorphous Inductance in Switch Circuit
- DOI
- 10.2991/isrme-15.2015.397How to use a DOI?
- Keywords
- frequency switching power supply technology; switch circuit; amorphous inductance; ferrite inductance; research;
- Abstract
Along with the development of high frequency switching power supply technology, people on the electromagnetic compatibility, noise pollution more and more seriously, the anti EMI technology has become a new technology and new industry, solves the problems of electromagnetic compatibility of electronic equipment is becoming more and more urgent, all kinds of anti electromagnetic interference suppression of noise and other magnetic devices widely used, one of the key elements of these devices is the inductance device. Switching power supply with its advantages of high efficiency, small volume, output stability good and rapid development. However, due to the high frequency, high di/dt and high dv/dt makes the problem of electromagnetic interference of switching power supply in the process of the work is very outstanding. China has been in a new 3C authentication to replace the CCIB and CCEE certification, which makes the switching power supply for the electromagnetic compatibility requirements more detailed and strict. Now, how to reduce or even eliminate the problem of EMI switching power supply has become a global switch power supply designers and electromagnetic compatibility (EMC) designers are very concerned problems.
- Copyright
- © 2015, the Authors. Published by Atlantis Press.
- Open Access
- This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).
Cite this article
TY - CONF AU - Yi Zhang PY - 2015/04 DA - 2015/04 TI - Discussion about Replacing Ferrite Inductance with Amorphous Inductance in Switch Circuit BT - Proceedings of the 2015 International Conference on Intelligent Systems Research and Mechatronics Engineering PB - Atlantis Press SP - 1935 EP - 1938 SN - 1951-6851 UR - https://doi.org/10.2991/isrme-15.2015.397 DO - 10.2991/isrme-15.2015.397 ID - Zhang2015/04 ER -