Proceedings of the International Symposium “Engineering and Earth Sciences: Applied and Fundamental Research” (ISEES 2018)

Thin Layers of Oxide Coating in Very-Large-Scale Integration

Authors
G. А. Mustafaev, А. I. Khasanov, А. G. Mustafaev, N. V. Cherkesova
Corresponding Author
G. А. Mustafaev
Available Online December 2018.
DOI
10.2991/isees-18.2018.76How to use a DOI?
Keywords
silicon oxide, nitriding, thin coating, degradation, ionizing radiation
Abstract

Scaling of very-large-scale integration (VLSI) circuits develops in the direction of increasing the surface of a crystal, packing density of elements on crystals, and miniaturization of components. These processes are limited by the necessity to provide high microelectronic reliability and sufficient percentage yield. For this reason, it is important to study the characteristics of thin oxide coating, as well as to investigate the degradation processes of metal oxide semiconductor (MOS) structures, made via nitriding gate oxide with the exposure to hot electrons and ionizing radiation.

Copyright
© 2018, the Authors. Published by Atlantis Press.
Open Access
This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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Volume Title
Proceedings of the International Symposium “Engineering and Earth Sciences: Applied and Fundamental Research” (ISEES 2018)
Series
Advances in Engineering Research
Publication Date
December 2018
ISBN
978-94-6252-637-2
ISSN
2352-5401
DOI
10.2991/isees-18.2018.76How to use a DOI?
Copyright
© 2018, the Authors. Published by Atlantis Press.
Open Access
This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

Cite this article

TY  - CONF
AU  - G. А. Mustafaev
AU  - А. I. Khasanov
AU  - А. G. Mustafaev
AU  - N. V. Cherkesova
PY  - 2018/12
DA  - 2018/12
TI  - Thin Layers of Oxide Coating in Very-Large-Scale Integration
BT  - Proceedings of the International Symposium “Engineering and Earth Sciences: Applied and Fundamental Research” (ISEES 2018)
PB  - Atlantis Press
SP  - 397
EP  - 399
SN  - 2352-5401
UR  - https://doi.org/10.2991/isees-18.2018.76
DO  - 10.2991/isees-18.2018.76
ID  - Mustafaev2018/12
ER  -