Thin Layers of Oxide Coating in Very-Large-Scale Integration
Authors
G. А. Mustafaev, А. I. Khasanov, А. G. Mustafaev, N. V. Cherkesova
Corresponding Author
G. А. Mustafaev
Available Online December 2018.
- DOI
- 10.2991/isees-18.2018.76How to use a DOI?
- Keywords
- silicon oxide, nitriding, thin coating, degradation, ionizing radiation
- Abstract
Scaling of very-large-scale integration (VLSI) circuits develops in the direction of increasing the surface of a crystal, packing density of elements on crystals, and miniaturization of components. These processes are limited by the necessity to provide high microelectronic reliability and sufficient percentage yield. For this reason, it is important to study the characteristics of thin oxide coating, as well as to investigate the degradation processes of metal oxide semiconductor (MOS) structures, made via nitriding gate oxide with the exposure to hot electrons and ionizing radiation.
- Copyright
- © 2018, the Authors. Published by Atlantis Press.
- Open Access
- This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).
Cite this article
TY - CONF AU - G. А. Mustafaev AU - А. I. Khasanov AU - А. G. Mustafaev AU - N. V. Cherkesova PY - 2018/12 DA - 2018/12 TI - Thin Layers of Oxide Coating in Very-Large-Scale Integration BT - Proceedings of the International Symposium “Engineering and Earth Sciences: Applied and Fundamental Research” (ISEES 2018) PB - Atlantis Press SP - 397 EP - 399 SN - 2352-5401 UR - https://doi.org/10.2991/isees-18.2018.76 DO - 10.2991/isees-18.2018.76 ID - Mustafaev2018/12 ER -