Proceedings of the 2015 International Power, Electronics and Materials Engineering Conference

Analysis transmission performance of complex interconnect structure and equivalent circuit

Authors
Yuling Shang, Jianfeng Ma, Chunquan Li
Corresponding Author
Yuling Shang
Available Online May 2015.
DOI
10.2991/ipemec-15.2015.171How to use a DOI?
Keywords
complex interconnect structure model; transmission characteristic; circuit model; S-parameter.
Abstract

The signal integrity problem has become a limit on current electronic system design and development. This paper studies the transmission performance for high-speed PCB complex interconnect structural model consists of via, solder ball and trace. Different length of traces and different radius of pads were simulated using HFSS to evaluate the effect of these parameters on the transmission characteristic. An equivalent circuit model of the complex interconnect structure was presented and the parameters values were extracted. The circuit model was simulated using the software ADS, compared to the results simulated using HFSS, the differences of return loss S11were within 1dB ranging from 1GHz to 6GHz, and within 2dB ranging from 6GHz to 10GHz.

Copyright
© 2015, the Authors. Published by Atlantis Press.
Open Access
This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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Volume Title
Proceedings of the 2015 International Power, Electronics and Materials Engineering Conference
Series
Advances in Engineering Research
Publication Date
May 2015
ISBN
978-94-62520-73-8
ISSN
2352-5401
DOI
10.2991/ipemec-15.2015.171How to use a DOI?
Copyright
© 2015, the Authors. Published by Atlantis Press.
Open Access
This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

Cite this article

TY  - CONF
AU  - Yuling Shang
AU  - Jianfeng Ma
AU  - Chunquan Li
PY  - 2015/05
DA  - 2015/05
TI  - Analysis transmission performance of complex interconnect structure and equivalent circuit
BT  - Proceedings of the 2015 International Power, Electronics and Materials Engineering Conference
PB  - Atlantis Press
SP  - 930
EP  - 935
SN  - 2352-5401
UR  - https://doi.org/10.2991/ipemec-15.2015.171
DO  - 10.2991/ipemec-15.2015.171
ID  - Shang2015/05
ER  -