Influence of annealing temperature on microstructure and H2 sensing properties of Pd-doped SnO2 sputtered thin films

DOI

10.2991/ipemec-15.2015.53How to use a DOI?

Keywords

SnO2 Thin Film; Palladium; Annealing; Hydrogen; Gas Sensor

Abstract

The influence of annealing temperature on the microstructure and H2 sensing properties of Pd-doped SnO2 sputtered thin films were investigated. The as-deposited film was amorphous and would crystallize to tetragonal SnO2 structure when the annealing temperature was above 350°C. The films were composed of columnar grains. Both crystallite size and grain size increased with an increase in annealing temperature. H2 sensing measurements showed that gas sensors based on these films obtained the peak response to 1000 ppm H2 at an operating temperature of 100°C and showed a good reversibility. The Pd-doped SnO2 thin film annealed at 450°C showed the highest response to H2. The improved gas sensing properties were attributed to the porosity of columnar nanostructures and catalytic activities of Pd doping.

Copyright

© 2015, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Yanbai Shen
AU  - Anfeng Fan
AU  - Dezhou Wei
AU  - Shuling Gao
AU  - Baoyu Cui
AU  - Lijun Jia
PY  - 2015/05
DA  - 2015/05
TI  - Influence of annealing temperature on microstructure and H2 sensing properties of Pd-doped SnO2 sputtered thin films
BT  - Proceedings of the 2015 International Power, Electronics and Materials Engineering Conference
PB  - Atlantis Press
SP  - 270
EP  - 275
SN  - 2352-5401
UR  - https://doi.org/10.2991/ipemec-15.2015.53
DO  - 10.2991/ipemec-15.2015.53
ID  - Shen2015/05
ER  -