The Analysis on 808 nm Semiconductor Laser Facet Temperature Characteristics

DOI

10.2991/iiicec-15.2015.191How to use a DOI?

Keywords

Semiconductor Laser; Temperature Characteristic; ZnSe; Passivation Coating

Abstract

The facet temperature characteristic of 808 nm semiconductor laser was researched. Catastrophic optical mirror damage (COMD) is one of major factor, which drastically limits optical power and lifetime of semiconductor laser. The heat source of semiconductor laser facet and the facet temperature field distribution were analyzed. The model of facet temperature distribution was established. The facet temperature characteristic of 808 nm semiconductor lasers for the ZnSe passivation coating of facet and uncoated the ZnSe passivation coating was analyzed. It is found that the temperature of device with the coated ZnSe passivation coating is lower than uncoated ZnSe passivation coating by 5.3C. It can effectively reduce the semiconductor laser facet temperature and improve the COMD threshold of 808 nm semiconductor laser with ZnSe passivation coating.

Copyright

© 2015, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Tiansheng Zhao
AU  - Zaijin Li
AU  - Te Li
AU  - Peng Lu
AU  - Yi Qu
AU  - Baoxue Bo
AU  - Guojun Liu
AU  - Xiaohui Ma
AU  - Yong Wang
PY  - 2015/03
DA  - 2015/03
TI  - The Analysis on 808 nm Semiconductor Laser Facet Temperature Characteristics
BT  - Proceedings of the 2015 International Industrial Informatics and Computer Engineering Conference
PB  - Atlantis Press
SP  - 854
EP  - 857
SN  - 2352-538X
UR  - https://doi.org/10.2991/iiicec-15.2015.191
DO  - 10.2991/iiicec-15.2015.191
ID  - Zhao2015/03
ER  -