Proceedings of the 2015 International Industrial Informatics and Computer Engineering Conference

The Analysis on 808 nm Semiconductor Laser Facet Temperature Characteristics

Authors
Tiansheng Zhao, Zaijin Li, Te Li, Peng Lu, Yi Qu, Baoxue Bo, Guojun Liu, Xiaohui Ma, Yong Wang
Corresponding Author
Tiansheng Zhao
Available Online March 2015.
DOI
10.2991/iiicec-15.2015.191How to use a DOI?
Keywords
Semiconductor Laser; Temperature Characteristic; ZnSe; Passivation Coating
Abstract

The facet temperature characteristic of 808 nm semiconductor laser was researched. Catastrophic optical mirror damage (COMD) is one of major factor, which drastically limits optical power and lifetime of semiconductor laser. The heat source of semiconductor laser facet and the facet temperature field distribution were analyzed. The model of facet temperature distribution was established. The facet temperature characteristic of 808 nm semiconductor lasers for the ZnSe passivation coating of facet and uncoated the ZnSe passivation coating was analyzed. It is found that the temperature of device with the coated ZnSe passivation coating is lower than uncoated ZnSe passivation coating by 5.3C. It can effectively reduce the semiconductor laser facet temperature and improve the COMD threshold of 808 nm semiconductor laser with ZnSe passivation coating.

Copyright
© 2015, the Authors. Published by Atlantis Press.
Open Access
This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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Volume Title
Proceedings of the 2015 International Industrial Informatics and Computer Engineering Conference
Series
Advances in Computer Science Research
Publication Date
March 2015
ISBN
978-94-62520-54-7
ISSN
2352-538X
DOI
10.2991/iiicec-15.2015.191How to use a DOI?
Copyright
© 2015, the Authors. Published by Atlantis Press.
Open Access
This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

Cite this article

TY  - CONF
AU  - Tiansheng Zhao
AU  - Zaijin Li
AU  - Te Li
AU  - Peng Lu
AU  - Yi Qu
AU  - Baoxue Bo
AU  - Guojun Liu
AU  - Xiaohui Ma
AU  - Yong Wang
PY  - 2015/03
DA  - 2015/03
TI  - The Analysis on 808 nm Semiconductor Laser Facet Temperature Characteristics
BT  - Proceedings of the 2015 International Industrial Informatics and Computer Engineering Conference
PB  - Atlantis Press
SP  - 854
EP  - 857
SN  - 2352-538X
UR  - https://doi.org/10.2991/iiicec-15.2015.191
DO  - 10.2991/iiicec-15.2015.191
ID  - Zhao2015/03
ER  -