Fabrication and Characterization of 1200V 40A 4H-SiC SBD

DOI

10.2991/ifeea-15.2016.12How to use a DOI?

Keywords

4H-SiC, SBD, ohmic

Abstract

High voltage 4H-SiC Ti schottky junction barrier schottky (JBS) diode with breakdown voltage of 1200 V and forward current of 40 A has been fabricated. A low reverse leakage current below 1.02 × 10-4 A or 4.08 × 10-4 A/cm2 at the 25 and the reverse bias voltage of 1200 V has been obtained. The forward on-state current was 40 A at VF = 1.61 V with 25 and at VF = 1.89 V with 100 . The chip is 5 mm × 5 mm and the active-region is 3.8 mm × 3.8 mm. The turn-on voltage is about 0.83 V. The on-state resistance is 4 m •cm2. The doping and thickness of the N-type drift layer and the device structure have been performed by numerical simulations. The SiC JBS devices have been fabricated and the processes were in detail. By using Ti/Ni/Au multilayer metal structure, the double side Au process of 4H-SiC JBS diode is formed.

Copyright

© 2016, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Gang Chen
AU  - Yinglu Fang
AU  - Yun Li
AU  - Lin Wang
AU  - Song Bai
AU  - Ao Liu
AU  - Runhua Huang
AU  - Yonghong Tao
AU  - Zhifei Zhao
PY  - 2016/01
DA  - 2016/01
TI  - Fabrication and Characterization of 1200V 40A 4H-SiC SBD
BT  - Proceedings of the 2015 2nd International Forum on Electrical Engineering and Automation (IFEEA 2015)
PB  - Atlantis Press
SP  - 58
EP  - 61
SN  - 2352-5401
UR  - https://doi.org/10.2991/ifeea-15.2016.12
DO  - 10.2991/ifeea-15.2016.12
ID  - Chen2016/01
ER  -