Study on HCl system wet-etching process of GaSb-based materials

DOI

10.2991/icmmita-16.2016.18How to use a DOI?

Keywords

GaSb-based material; HCl system; wet-etching.

Abstract

In this paper, GaSb-based material in the near-infrared semiconductor laser has a broad application prospects. For the problems and etching solution suitable particularly critical of etching GaSb-based material. we studied on different etchant experimental analysis the HCl+HNO3(30+1)@T=5 ,37% HCl, HNO3+(0.08MHCl+CH3COOH) and HCl+H2O2+H2O(60+1+1), due to etching, the effects of different etching solutions on GaSb surface morphology, corrosion rate, etc., obtained HCl + H2O2 + H2O (60 + 1 + 1) treatment results was better, SEM showed the etched edge relatively tidy, relatively steep side, etched crystal to better selectivity, AFM surface roughness was 1.7nm.

Copyright

© 2017, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Minghui You
AU  - Qixiang Sun
AU  - Shijun Li
AU  - Liping Yin
AU  - Xue Li
AU  - Jingsheng Liu
PY  - 2017/01
DA  - 2017/01
TI  - Study on HCl system wet-etching process of GaSb-based materials
BT  - Proceedings of the 2016 4th International Conference on Machinery, Materials and Information Technology Applications
PB  - Atlantis Press
SP  - 90
EP  - 93
SN  - 2352-538X
UR  - https://doi.org/10.2991/icmmita-16.2016.18
DO  - 10.2991/icmmita-16.2016.18
ID  - You2017/01
ER  -