Phase-Field Simulation for the Effects of Initial Vacancy Concentration and Annealing Temperature on Oxygen Clusters in Silicon Wafer

DOI

10.2991/icmmct-16.2016.377How to use a DOI?

Keywords

phase field simulation; silicon wafer; low temperature annealing; initial vacancy concentration; annealing temperature; oxygen clusters.

Abstract

In order to investigate the dual effect of initial vacancy concentration and annealing temperature on oxygen clusters′ evolution in RTP-treated silicon wafer during low temperature annealing, an established phase-field model and the optimum design method based on response surface was used to simulated the processes of oxygen clusters′ evolution under their different combined conditions. The results show that the comprehensive influence of initial vacancy and annealing temperature on oxygen clusters mainly comes from their respective effects, and when initial vacancy concentration is higher than 1×1015 cm-3 and annealing temperature changes from 1075 K to 1175 K, the more numerous oxygen clusters can generate in the process of low temperature annealing.

Copyright

© 2016, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Xiao-Jun Guan
AU  - Xiang Ji
PY  - 2016/03
DA  - 2016/03
TI  - Phase-Field Simulation for the Effects of Initial Vacancy Concentration and Annealing Temperature on Oxygen Clusters in Silicon Wafer
BT  - Proceedings of the 2016 4th International Conference on Machinery, Materials and Computing Technology
PB  - Atlantis Press
SP  - 1893
EP  - 1897
SN  - 2352-5401
UR  - https://doi.org/10.2991/icmmct-16.2016.377
DO  - 10.2991/icmmct-16.2016.377
ID  - Guan2016/03
ER  -