Surface Passivation Process Study with Polyimide for High Voltage IGBT

DOI

10.2991/icmmcce-17.2017.81How to use a DOI?

Abstract

In this paper, high voltage high power insulated gate bipolar transistors (IGBT) were fabricated with the passivation layer by photosensitive polyimide (PSPI) process. The PSPI was spin coated on a silicon substrate. The soft bake conditions were firstly discussed. In consideration of thermal properties, a temperature hard bake process was carefully optimized. Finally, the polyimide passivation layer was hardened by exposure to nitrogen at 120 C for 60min+160 C for 60min+240 C for 80min+280 C for 30min+350 C for 60min. Using this optimized cured process, the outgassing effect in post-fabrication heat treatment can be easily eliminated. Threshold Voltage swings observed on IGBTs power devices before and after H3TRB have been correlated to the presence of a PSPI passivation layer. As a result, it verifies passivation quality of the PSPI layer.

Copyright

© 2017, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Guoqing Leng
AU  - Li Gong
AU  - Tao Zhu
AU  - Di Wu
AU  - Jiang Liu
AU  - Rui Jin
AU  - Jialiang Wen
AU  - Yan Pan
PY  - 2017/09
DA  - 2017/09
TI  - Surface Passivation Process Study with Polyimide for High Voltage IGBT
BT  - Proceedings of the 2017 5th International Conference on Mechatronics, Materials, Chemistry and Computer Engineering (ICMMCCE 2017)
PB  - Atlantis Press
SP  - 424
EP  - 429
SN  - 2352-5401
UR  - https://doi.org/10.2991/icmmcce-17.2017.81
DO  - 10.2991/icmmcce-17.2017.81
ID  - Leng2017/09
ER  -