Research on Dynamic Characteristics of Trench Type Bidirectional IGBT

DOI

10.2991/icmmcce-15.2015.457How to use a DOI?

Keywords

Bidirectional IGBT, Dynamic characteristics.

Abstract

To improve the switching characteristics of conventional structure IGBT, a new trench type bidirectional insulated gate bipolar transistor (IGBT) is proposed. The main feature of this structure is introducing a cell in collector of conventional trench IGBT. The new type IGBT reduce both turn-on and turn-off losses because double-gate IGBT can accelerate carrier extraction speed. By building the device simulation DC/AC circuit of dynamic characteristics, the turn-on time is 0.12 s and turn-off time is 5.1ns. Compared with conventional IGBT, the new type IGBT’s turn-on and turn-off loss have a great reduce.

Copyright

© 2015, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Jia Qiang Xie
AU  - Yong Gao
AU  - Yuan Yang
AU  - Li Ma
PY  - 2015/12
DA  - 2015/12
TI  - Research on Dynamic Characteristics of Trench Type Bidirectional IGBT
BT  - Proceedings of the 4th International Conference on Mechatronics, Materials, Chemistry and Computer Engineering 2015
PB  - Atlantis Press
SP  - 1029
EP  - 1032
SN  - 2352-538X
UR  - https://doi.org/10.2991/icmmcce-15.2015.457
DO  - 10.2991/icmmcce-15.2015.457
ID  - Xie2015/12
ER  -